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An 8-GHz VCO with class-F 23  operation was realized in a 40 nm CMOS technology without ultra-thick metals. The class-F 23  operation was enabled in a transformer-based LC tank to allow multiple impedance peaks in the common mode (CM) and the differential mode (DM) excitation.With the additional resonance at 2  nd   and 3  rd   harmonic frequency, the circuit noise to phase-noise conversion and 1/f noise up-conversion are reduced significantly. In a 40 nm CMOS technology without ultra-thick metal, a patterned shielding structure was proposed to improve the inductor quality factor. A combined varactor and capacitor array is proposed to provide accurate matching for a desired resonance frequency ratio, reducing AM-FM conversion and it achieves a broad tuning range.With the proposed transformer-based LC bank and class-F 23  operation, the oscillator achieves a phase noise of -150.8 dBc/Hz at 10 MHz offset from a 1.85 GHz carrier after an on-chip /4 divider, and the measured 1/f 3  flicker noise corner is around 400 kHz. The oscillator core covers a 7.5-9.4 GHz frequency range for a 25% tuning range.

A 25% Tuning Range 7.5-9.4 GHz Oscillator with 194 FoM T and 400 MHz 1/f 3 Corner in 40nm CMOS Technology