A Cryo-CMOS 800-MS/s 7-bit Charge-Injection SAR ADC With Only 4-fF Input Capacitance and 64-dB SFDR in 40-nm Bulk CMOS
Author(s) -
Bram Veraverbeke,
Filip Tavernier
Publication year - 2025
Publication title -
ieee journal of solid-state circuits
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.571
H-Index - 215
eISSN - 1558-173X
pISSN - 0018-9200
DOI - 10.1109/jssc.2025.3594126
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas , computing and processing
This article presents a cryogenic CMOS (cryo-CMOS) 800-MS/s 7-bit analog-to-digital converter (ADC) with an input capacitance of only 4 fF, which is > $13\times $ lower than the prior art. This small capacitance is enabled by its charge-injection digital-to-analog converter (CI-DAC), which maximally exploits the low thermal noise in the cryogenic environment. Despite its small input capacitance, this ADC maintains a high linearity by: 1) implementing a split CI-DAC with a bidirectional charge flow, which keeps the CI-DAC output common mode constant throughout the conversion; 2) by adopting a bottom-plate sampling scheme; and 3) by introducing a static preamplifier in the comparator. The resulting prototype ADC, implemented in a 40-nm bulk CMOS technology, has a core area of only 0.0056mm 2 and a full-scale input swing of 0.84 $V {_{\text {pp,diff}}}$ . It achieves an SNDR of 40.7dB, an SFDR of 64.1dB, and an effective resolution bandwidth (ERBW) of 2.5GHz at a temperature of 6.5K. It dissipates 2.89mW at a sample rate of 800MS/s.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom