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Generation of α‐SiC stacking sequences
Author(s) -
Roof R. B.,
Bivins R. L.
Publication year - 1970
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889870006623
Subject(s) - stacking , hexagonal crystal system , crystallography , crystal structure , yield (engineering) , unit (ring theory) , crystal (programming language) , materials science , layer (electronics) , computer science , chemistry , mathematics , nanotechnology , physics , composite material , nuclear magnetic resonance , mathematics education , programming language
α‐SiC crystal structures are polymorphs usually consisting of 2‐, 3‐ and 4‐layer blocks arranged in stacking sequences in order to yield a specific number of layers in a hexagonal unit cell. A computer‐generated tabulation of some combinations of these blocks into significant sequences representing possible crystal structures is available from the authors.

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