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The low separation rate of photo-generated e − -h +  pairs is one of the important elements leading to poor performance of semiconductor photocatalysts. The construction of heterojunctions is an effective method to separate e − -h +  pairs. For the purpose of addressing the efficient visible light driven photocatalysts, we construct a g-C 3 N 4 /ZnS heterojunction by a facile in-situ synthetic method. The as-obtained productions were characterized by XRD, UV-vis DRS and PL. Different weight ratios of g-C 3 N 4 /ZnS were prepared and g-C 3 N 4 /ZnS-8:1 displayed the highest photo activity for MO degradation. It is capable of declining 74.4% of MO within 160 min, •O 2 −  and h + play a most important function in the reaction. The enhancement of photocatalytic performance is ascribed to the formation of heterojunction, which promotes the separation of photo-generated e − -h +  pairs.

Enhanced Photocatalytic Performance of g-C3N4 Decorated with MOF-Derived Hollow ZnS Polyhedrons

Enhanced Photocatalytic Performance of g-C₃N₄ Decorated with MOF-Derived Hollow ZnS Polyhedrons