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InGaAs quantum wells (QWs) are grown on GaAs substrates by metal-organic chemieal vapor deposition (MOCVD). Sample grown on substrates (100) oriented 2° off towards   exhibits relatively high photoluminescence (PL) intensity and narrow full-width at half-maximum (FWHM). Increasing growth rate leads to the enhancement of PL intensity and decrease of FWHM. Asymmetric waveguide layers are applied to reduce the confinement factor of base mode and increase the loss of higher-order mode.

Study on Optical Properties and Waveguide Structure Optimization of Semiconductor Lasers with InGaAs Quantum Well