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Silicon carbide is a promising material for various applications, especially for applications in high frequency, high power and high temperature and harsh conditions such as highly oxidative and corrosive environment. Currently, silicon carbide is produced by conventional heating process. For silicon carbide nanomaterials, various methods have been attempted. In this study, SiC nanowhiskers were synthesized by microwave heating of blends of graphite and silica in the ratio of 3: 1. Graphite of two different size, namely micro graphite and nano graphite were used. The blends firstly prepared by ultrasonic mixing graphite and silica in ethanol followed by drying. The blends were then heated by using laboratory microwaves furnace to 1450 °C at heating rate of 20 °C/min for 20 minutes. Finally, the SiC nanowhiskers was characterized by using scanning electron microscope.

Synthesis of SiC nanowhiskers by microwave heating: effect of size of graphite