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With boron carbide (B 4 C) as sintering additives, silicon carbide (SiC) ceramics were prepared in 2100°C by solid-phase sintering under argon atmosphere. The change of microstructure, phase composition and density for all sintered samples were studied. The results showed that with the increase of B 4 C addition, the density of SiC ceramic was significantly increasing between 0-4 wt% of B 4 C addition and slightly increasing between 4-8 wt%. XRD analysis showed that all the ceramics without B 4 C were SiC-6H crystal, while those with B 4 C contained SiC-4H crystal, B 4 C turned SiC-6H to SiC-4H, and the more B 4 C added, the more change it made. SiC ceramic particles changed from equiaxial shape without B 4 C to flake shape with B 4 C added, and the particle sizes increased significantly with the amount of B 4 C additive.

Effect of Boron Carbide Additive on SiC Ceramic Sintered by Solid-Phase Method under Ar Atmosphere