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A new passivation layer of AlO x /SiO x  were prepared, in which 80 nm SiO x  was prepared by spin-coating perhydropolysilazane (PHPS) and annealed at 450°C. In order to compare the passivation effect of single AlO x  layers and the SiO x /AlO x  stack on silicon surface, the fixed charge (Q f ) in the passivated layers and chemical passivation effect were obtained by corona charge method. Fourier transform infrared spectroscopy (FTIR) and Time-of-flight secondary ion mass spectrometry (TOF-SIMS) was used to investigate the Si-H, Si-O bonds and the hydrogen profile in the passivation layer, respectively. The result reveals that the single layer of AlO x  provides good field effect with a large amount of negative Q f . Furthermore, SiO x  capping on AlO x  have more excellent chemical passivation because of amount of H saturate the dangling bonds on the silicon surface.

Passivation Mechanisms of Atomic Layer-deposited AlOx Films and AlOx/SiOx Stack

Passivation Mechanisms of Atomic Layer-deposited AlO_x Films and AlO_x/SiO_x Stack