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Zinc oxide thin films were deposited by DC sputtering at thickness (100) nm on the glass and p-Si wafer to fabricate ZnO/p-Si solar cell. All films annealed at 400°C and 500°C temperatures. Structural, optical, electrical and photovoltaic properties were investigated before and after treatment by plasma. XRD analysis revealed that all the ZnO films showed polycrystalline hexagonal structure. Average grain size calculated from AFM images showed a decrease in its value after plasma treatment, ranging from (47) nm- (25) nm. The optical transmission for samples were measured using UV-vis spectrophotometer, were used to study the energy gap. The optical characterization showed that the film has band gap that ranged in the between 3.7 eV, the average transmittance of films was found to be range of 70% to 85% in the VIS-IR regions. The electrical properties were obtained by J-V measurement. The saturation current density was calculated. The photovoltaic measurements, short-circuit current density J sc , fill factor, were calculated for all samples.

Effect of surface modification of Si wafers on solar cell efficiency ZnO/P-Si thin films prepared by plasma sputtering