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The absorbability of ZnO planar thin layer is weak because of the short transmission path of incident light. The light trapping effect of ZnO UV PDs has been established as a promising method to optimize the performance of optoelectronic devices. By measuring the optical transmission and photocurrent of the ZnO PDs, we demonstrate that the ordered ZnO NWs increases the optical responsivity. In addition, when the photodetector was connected to nanowires, the responsivity is increased by a factor of 10 2 , accompanied by a large light dark current ratio (10 5 ). ZnO nanowires with light trapping effect provide a new perspective for the research of ultraviolet irradiation nanomaterials.

Improved Responsivity of ZnO Nanowires Ultraviolet Photodetector by Light Trapping Effect