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First measurements are presented from a newly commissioned two-photonabsorption (TPA) setup at Nikhef. The characterisation of the variouscomponents of the system is discussed. Two planar silicon sensors, one beingelectron collecting and one hole collecting, are characterised with detailedmeasurements of the charge collection and time resolution. The TPA spot isdetermined to have a radius of 0.975(11) $\mu\text{m}$ and length of 23.8$\mu\text{m}$ in silicon. The trigger time resolution of the system is shown tobe maximally 30.4 ps. For both sensors, uniform charge collection is observedover the pixels, and the pixel side metallisation is imaged directly using theTPA technique. The best time resolution for a single pixel is found to be 600ps and 560 ps for the electron and hole collecting sensors respectively, and isdominated by ASIC contributions. Further scans at different depths in thesensor and positions within the pixels have been performed and show a uniformresponse. It is concluded that the TPA setup is a powerful tool to investigatethe charge collection and temporal properties of silicon sensors.

Charge and temporal characterisation of silicon sensors using a two-photon absorption laser