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A monolithic silicon pixel detector prototype has been produced in the SiGeBiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix ofhexagonal pixels with pitch of approximately 100 $\mu$m. Three analog pixelswere calibrated in laboratory with radioactive sources and tested in a 180GeV/c pion beamline at the CERN SPS. A detection efficiency of$\left(99.9^{+0.1}_{-0.2}\right)$% was measured together with a time resolutionof $(36.4 \pm 0.8)$ps at the highest preamplifier bias current working point of150 $\mu$A and at a sensor bias voltage of 160 V. The ASIC was alsocharacterized at lower bias voltage and preamplifier current.

Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology