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Key features of semiconductor lasers and its serially manufacturing technology modernization have greatly expanded of its using at applied studies at last 20 years. But there is set of factors restricting such lasers application in a number of optical-electronic measuring complexes. Particularly in particle image velocimetry (PIV) and laser Doppler velocimetry (LDV) complexes commonly the gas and solid-state lasers is used due to more stability of spectral, energy and polarization characteristics of radiation then semiconductor lasers have. However gradual introduction of the serially manufacturing laser diodes into such systems picking up the pace that certainly characterizes the progress of reaching the required stability of its output laser radiation parameters. In laser measurement systems where medium investigation carried out by analyzing of scattering radiation in it the probe radiation polarization is often important. So the using in such systems the laser diodes as sources of radiation need to be followed by stability monitoring of its polarization characteristics which may be violated both by the outer factors and by natural degradation of inner laser diode structure. This work is devoted to the issues of monitoring the radiation polarization characteristics of the serially manufacturing single-mode laser diodes.

Polarization stability of the single-mode laser diodes radiation applied in radiation scattering study complexes