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The pristine anti-ferromagnetic interlayer coupling of even layers MnBi2Te4 greatly restricts the possibility of realizing quantum anomalous Hall (QAH) effect. In this work, based on first-principles calculations, we find that the interlayer coupling can be transformed into ferromagnetic order from anti-ferromagnetic by substituting cations with V atoms. Furthermore, when applying biaxial strain, a strong band inversion occurs around Fermi level, achieving quantum anomalous Hall effect. A gapless surface states can further confirm it. Meanwhile, the magnetic moment of Mn and V atoms increases with the increase of strain. We attribute this to the electron hopping to magnetic atoms from p orbitals of nonmagnetic Bi and Te atoms. Our work extends the range for designing and applying for spintronic devices with QAH effect.

Interlayer ferromagnetic coupling and enhanced magnetism by biaxial strain in MnBi2Te4/VBi2Te4 heterojunction