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The porous silicon (PSi) has been successfully formed on the surface of p-type Si (100) using the electrochemical anodization method in which Si was as an anode and Pt was as a cathode etched in the HF ethanoic solution for 12 min. The current densities applied during the anodization process varied from 60 mA/cm 2 , 70 mA/cm 2 , 80 mA/cm 2 , and 90 mA/cm 2  to observe its effects on the morphological and optical properties of PSi. The morphology of PSi was tested via AFM instrument while its reflectance was measured using UV-Vis Spectrometry. The AFM images of the surface PSi reveals the pores’ depth, the pores’ size, and the surface roughness of the PSi. The results demonstrate that the increase in the current densities results in the deeper pores’ depth and the bigger pores’ size so that lifts the surface roughness values as well. On the other hand, the increase in the current densities tends to decrease the reflectance intensities of the PSi.

The formation of porous silicon (PSi) on p-type Si (100) substrate via the electrochemical anodization method with varying current density