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Simulation analysis of III-N two-dimensional electron gas-based structures that could be used for stable monolithically integrated enhancement/depletion-mode circuits was carried out. Three different designs were proposed and analysed, including a novel p-GaN/AlN-GaN SPSL/GaN, which is expected to have lower ON-state resistance and higher transconductance than conventional normally-off GaN-based transistors.

III-N heterostructures for monolithic integration of enhancement/depletion-mode high-electron-mobility transistors