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We study the implications of the anisotropic magnetic resistance on permalloynanowires, and in particular on the property of the resistance depending on thetype of lattice. We discuss how the internal spin configuration of artificialspin ice nanowires can affect their effective resistive state, and whichmechanisms can introduce a current-dependent effect dynamic resistive state. Wediscuss a spin-induced thermal phase-change mechanism, and an athermaldomain-wall spin inversion. In both cases we observe memory behaviorreminiscent of a memristor, with an I-V hysteretic pinched behavior.

Artificial Spin Ice Phase-Change Memory Resistors