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Using the technique of photoelectron diffraction in the scanned energy mode we show that the Si dimer separation on the Si{100} surface following the adsorption of ethene (ethylene) is 2.36(Â±0:21) Ã…. This value is only very slightly larger than on the clean surface and shows that the dimer remains intact, thus providing a clear quantitative experimental resolution of a long controversy in the literature. The C-C and C-Si separations are 1.62Â±0.08 Ã… and 1.90 Â± 0.01 Ã…, respectively, the former indicating a bond order of less than one

The dimers stay intact: a quantitative photoelectron study of the adsorption system Si{100} (2x1)-C2H4

The dimers stay intact: a quantitative photoelectron study of the adsorption system Si{100} (2x1)-C₂H₄