Open AccessCritical thickness of GaN on AlN: impact of growth temperature and dislocation density
Author(s) -
Pirouz Sohi,
D. Martin,
N. Grandjean
Publication year - 2017
Publication title -
semiconductor science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.712
H-Index - 112
eISSN - 1361-6641
pISSN - 0268-1242
DOI - 10.1088/1361-6641/aa7248
Subject(s) - materials science , sapphire , dislocation , nitride , heterojunction , molecular beam epitaxy , stress relaxation , relaxation (psychology) , epitaxy , crystallography , condensed matter physics , optoelectronics , layer (electronics) , composite material , chemistry , optics , creep , psychology , laser , social psychology , physics
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