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Piezoelectric nanowires are promising materials for sensing, actuation andenergy harvesting, due to their enhanced properties at the nanoscale. However,quantitative characterization of piezoelectricity in nanomaterials ischallenging due to practical limitations and the onset of additionalelectromechanical phenomena, such as the triboelectric and piezotronic effects.Here, we present an open-circuit conductive atomic force microscopy (cAFM)methodology for quantitative extraction of the axial piezoelectric coefficientsof nanowires. We show, both theoretically and experimentally, that the standardshort-circuit cAFM mode is inadequate for piezoelectric characterization ofnanowires, and that such measurements are governed by competing mechanisms. Weintroduce an alternative open-circuit configuration, and employ time-resolvedelectromechanical measurements, to extract the piezoelectric coefficients. Thismethod was applied to GaAs, an important semiconductor, with relatively lowpiezoelectric coefficients. The results obtained for GaAs,~0.4-1 pm/V, are ingood agreement with existing knowledge and theory. Our method represents asignificant advance in understanding the coexistence of differentelectromechanical effects, and in quantitative piezoelectric nanoscalecharacterization. The easy implementation will enable better understanding ofelectromechanics at the nanoscale.

Time-Resolved Open-Circuit Conductive Atomic Force Microscopy for Quantitative Analysis of Nanowire Piezoelectricity and Triboelectricity