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Interface phonon modes that are generated by several atomic layers at theheterointerface play a major role in the interface thermal conductance fornanoscale high-power devices such as nitride-based high-electron-mobilitytransistors and light emitting diodes. Here we measure the local phonon spectraacross AlN/Si and AlN/Al interfaces using atomically resolved vibrationalelectron energy-loss spectroscopy in a scanning transmission electronmicroscope. At the AlN/Si interface, we observe various localized phonon modes,of which the extended and interfacial modes act as bridges to connect the bulkAlN modes and bulk Si modes, and are expected to boost the inelastic phonontransport thus substantially contribute to interface thermal conductance. Incomparison, no such phonon bridge is observed at the AlN/Al interface, forwhich partially extended modes dominate the interface thermal conductivity.This work provides valuable insights into understanding the interfacial thermaltransport in nitride semiconductors and useful guidance for thermal managementvia interface engineering.

Atomic-Scale Probing of Heterointerface Phonon Bridges in Nitride Semiconductor