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Cs2AgBiBr6 (CABB) has been proposed as a promising non-toxic alternative tolead halide perovskites. However, low charge carrier collection efficienciesremain an obstacle for the incorporation of this material in optoelectronicapplications. In this work, we study the optoelectronic properties of CABB thinfilms using steady state and transient absorption and reflectance spectroscopy.We find that optical measurements on such thin films are distorted as aconsequence of multiple reflections within the film. Moreover, we discuss thepathways behind conductivity loss in these thin films, using a combination ofmicrosecond transient absorption and time-resolved microwave conductivityspectroscopy. We demonstrate that a combined effect of carrier loss andlocalization results in the conductivity loss in CABB thin films. Moreover, wefind that the charge carrier diffusion length and sample thickness are of thesame order. This suggests that the materials surface is an importantcontributor to charge carrier loss.

Recombination and localization: unfolding the pathways behind conductivity losses in Cs2AgBiBr6 thin films