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This article presents the experimental results of 17 MeV proton irradiation on a 60 GHz low power, half‐duplex transceiver (TRX) chip implemented in 65 nm CMOS technology. It supports short range point‐to‐point data rate up to 6 Gbps by employing on‐off keying (OOK). To investigate the irradiation hardness for high‐energy physics (HEP) applications, two TRX chips were irradiated with total ionising doses (TID) of 74 and 42 kGy and fluence of   1.4   ×    10    14Neq/cm    2    and   0.8   ×    10    14Neq/cm    2    for RX and TX modes, respectively. The chips were characterised by pre‐ and post‐irradiation analogue voltage measurements on different circuit blocks as well as through the analysis of wireless transmission parameters like bit error rate (BER), eye diagram, jitter etc. Post‐irradiation measurements have shown certain reduction in performance but both TRX chips have been found operational through over the air measurements at 5  Gbps . Moreover, very small shift in the carrier frequency was observed after the irradiation.

Effects of proton irradiation on 60 GHz CMOS transceiver chip for multi‐Gbps communication in high‐energy physics experiments