Offset error reduction using gate‐bulk‐driven error correction amplifier for low‐voltage sub‐bandgap reference

Presented is a gain‐boosted gate‐bulk‐driven error correction amplifier with reduced offset errors for low‐voltage sub‐bandgap reference designs. The method can be applied to sub‐bandgap circuits with BJT diodes, subthreshold MOSFETs or Schottky barrier diodes. Detailed analysis and circuit implementation are presented. Low voltage operation has been verified over − 55 to 125 °C. Simulation and measurement results demonstrate the minimised offset error and improved supply sensitivity, which indicates the effectiveness of the proposed gain boosting mechanism.