Open AccessOffset error reduction using gate‐bulk‐driven error correction amplifier for low‐voltage sub‐bandgap reference
Author(s) -
Lu Li,
Li Changzhi
Publication year - 2013
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2013.0765
Subject(s) - offset (computer science) , bandgap voltage reference , input offset voltage , reduction (mathematics) , materials science , amplifier , electronic engineering , voltage , error detection and correction , optoelectronics , voltage reference , computer science , operational amplifier , electrical engineering , mathematics , cmos , engineering , algorithm , dropout voltage , programming language , geometry
Presented is a gain‐boosted gate‐bulk‐driven error correction amplifier with reduced offset errors for low‐voltage sub‐bandgap reference designs. The method can be applied to sub‐bandgap circuits with BJT diodes, subthreshold MOSFETs or Schottky barrier diodes. Detailed analysis and circuit implementation are presented. Low voltage operation has been verified over − 55 to 125 °C. Simulation and measurement results demonstrate the minimised offset error and improved supply sensitivity, which indicates the effectiveness of the proposed gain boosting mechanism.