Open AccessA mechanism for the variation in the photoelectric performance of a photodetector based on CVD-grown 2D MoS2
Author(s) -
Jiaying Jian,
Honglong Chang,
Pengfan Dong,
Zewen Bai,
Kangnian Zuo
Publication year - 2021
Publication title -
rsc advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.746
H-Index - 148
ISSN - 2046-2069
DOI - 10.1039/d0ra10302k
Subject(s) - photoelectric effect , photodetector , doping , materials science , optoelectronics , annealing (glass) , band gap , nanoelectronics , chemical vapor deposition , nanotechnology , composite material
Two-dimensional transition-metal dichalcogenides are considered as promising candidates for next-generation flexible nanoelectronics owing to their compelling properties. The photoelectric performance of a photodetector based on CVD-grown 2D MoS 2 was studied. It is found that annealing treatment can make the photoresponsivity and specific detectivity of the CVD-grown 2D MoS 2 based photodetector increase from 0.1722 A W -1 and 10 14.65 Jones to 0.2907 A W -1 and 10 14.84 Jones, respectively, while vulcanization can make the rise response time and fall response time decrease from 0.9013 s and 2.173 s to 0.07779 s and 0.08616 s, respectively. A method to determine the O-doping concentration in the CVD-grown 2D MoS 2 has been obtained. The criterion for the CVD-grown 2D MoS 2 to transition from an oxygen-doped state to a pure state has been developed. A mechanism explaining the variation in the photoelectric performance of the CVD-grown 2D MoS 2 has been proposed. The CVD-grown 2D MoS 2 and the annealed CVD-grown 2D MoS 2 are oxygen-doped MoS 2 while the vulcanized CVD-grown 2D MoS 2 is pure MoS 2 . The variation in the photoelectric performance of CVD-grown 2D MoS 2 results from differences in the O-doping concentration and the bandgap.