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The detection of electron spins associated with single defects in solids is acritical operation for a range of quantum information and measurementapplications currently under development. To date, it has only beenaccomplished for two centres in crystalline solids: phosphorus in silicon usingelectrical readout based on a single electron transistor (SET) andnitrogen-vacancy centres in diamond using optical readout. A spin readoutfidelity of about 90% has been demonstrated with both electrical readout andoptical readout, however, the thermal limitations of the electrical readout andthe poor photon collection efficiency of the optical readout hinder achievingthe high fidelity required for quantum information applications. Here wedemonstrate a hybrid approach using optical excitation to change the chargestate of the defect centre in a silicon-based SET, conditional on its spinstate, and then detecting this change electrically. The optical frequencyaddressing in high spectral resolution conquers the thermal broadeninglimitation of the previous electrical readout and charge sensing avoids thedifficulties of efficient photon collection. This is done with erbium insilicon and has the potential to enable new architectures for quantuminformation processing devices and to dramatically increase the range of defectcentres that can be exploited. Further, the efficient electrical detection ofthe optical excitation of single sites in silicon is a major step in developingan interconnect between silicon and optical based quantum computingtechnologies.

Optical addressing of an individual erbium ion in silicon