Open AccessNi-Doped SnO2 as an Electron Transport Layer by a Low-Temperature Process in Planar Perovskite Solar Cells
Author(s) -
Hoang Van Quy,
Chung Wung Bark
Publication year - 2022
Publication title -
acs omega
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.779
H-Index - 40
ISSN - 2470-1343
DOI - 10.1021/acsomega.2c00965
Subject(s) - materials science , energy conversion efficiency , perovskite (structure) , doping , optoelectronics , planar , layer (electronics) , mesoporous material , perovskite solar cell , electron , electron transport chain , chemical engineering , nanotechnology , chemistry , catalysis , computer science , biochemistry , computer graphics (images) , physics , quantum mechanics , engineering
Perovskite solar cells (PSCs) based on a planar structure have recently become more attractive due to their simple manufacturing process and relatively low cost, while most perovskite solar cells employ highly porous TiO 2 as an electron transport layer in mesoporous devices offering higher energy conversion efficiency (PCE). In planar structural devices, non-radiative recombination effects of the absorber layer and the electron transport layer cause potential loss and lower PCE. We created an efficient electron transport layer by combining low-temperature Ni-doped SnO 2 with SDBS as a surfactant (denoted as Ni:SnO 2 ). Doping Ni + into low-temperature solution-processed SnO 2 increased the power conversion efficiency of PSCs from 17.8 to 19.7%.