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Doping plays a significant role in affecting the physical and chemical properties of two-dimensional (2D) dichalcogenide materials. Controllable doping is one of the major factors in the modification of the electronic and mechanical properties of 2D materials. MoS 2 2D materials have gained significant attention in gas sensing owing to their high surface-to-volume ratio. However, low response and recovery time hinder their application in practical gas sensors. Herein, we report the enhanced gas response and recovery of Nb-doped MoS 2 gas sensor synthesized through physical vapor deposition (PVD) toward NO 2 at different temperatures. The electronic states of MoS 2 and Nb-doped MOS 2 monolayers grown by PVD were analyzed based on their work functions. Doping with Nb increases the work function of MoS 2 and its electronic properties. The Nb-doped MoS 2 showed an ultrafast response and recovery time of t  rec = 30/85 s toward 5 ppm of NO 2 at their optimal operating temperature (100 °C). The experimental results complement the electron difference density functional theory calculation, showing both physisorption and chemisorption of NO 2 gas molecules on niobium substitution doping in MoS 2 .

RF Sputtered Nb-Doped MoS2 Thin Film for Effective Detection of NO2 Gas Molecules: Theoretical and Experimental Studies

RF Sputtered Nb-Doped MoS₂ Thin Film for Effective Detection of NO₂ Gas Molecules: Theoretical and Experimental Studies