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We demonstrate a graphene-MoS2 architecture integrating multiple field-effecttransistors and we independently probe and correlate the conducting propertiesof van der Waals coupled graphene-MoS2 contacts with the ones of the MoS2channels. Devices are fabricated starting from high-quality single-crystalmonolayers grown by chemical vapor deposition and characterized by scanningRaman and photoluminescence spectroscopies. Transconductance curves of MoS2 arecompared with the current-voltage characteristics of graphene contact stripes,revealing a significant suppression of transport on the n-side of thetransconductance curve. Based on ab-initio modeling, the effect is understoodin terms of trapping by sulfur vacancies, which counter-intuitively depends onthe field-effect, even though the graphene contact layer is positioned betweenthe backgate and the MoS2 channel.

Unexpected Electron Transport Suppression in a Heterostructures Graphene MoS2 Multiple Field-Effect Transistor Architecture