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In stacks of two-dimensional crystals, mismatch of their lattice constantsand misalignment of crystallographic axes lead to formation of moir\'{e}patterns. We show that moir\'{e} superlattice effects persist in twistedbilayer graphene (tBLG) with large twists and short moir\'{e} periods. Usingangle-resolved photoemission, we observe dramatic changes in valence bandtopology across large regions of the Brillouin zone, including the vicinity ofthe saddle point at $M$ and across 3 eV from the Dirac points. In this energyrange, we resolve several moir\'{e} minibands and detect signatures ofsecondary Dirac points in the reconstructed dispersions. For twists$\theta>21.8^{\circ}$, the low-energy minigaps are not due to coneanti-crossing as is the case at smaller twist angles but rather due tomoir\'{e} scattering of electrons in one graphene layer on the potential of theother which generates intervalley coupling. Our work demonstrates robustness ofmechanisms which enable engineering of electronic dispersions of stacks oftwo-dimensional crystals by tuning the interface twist angles. It also showsthat large-angle tBLG hosts electronic minigaps and van Hove singularities ofdifferent origin which, given recent progress in extreme doping of graphene,could be explored experimentally.

Moir\'{e} superlattice effects and band structure evolution in near-30-degree twisted bilayer graphene