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High quality heteroepitaxial two-dimensional (2D) InSb layers are verydifficult to realize owing to the large lattice mismatch with other widespreadsemiconductor substrates. A way around this problem is to grow free-standing 2DInSb nanostructures on nanowire (NW) stems, thanks to the capability of NWs toefficiently relax elastic strain along the sidewalls when lattice-mismatchedsemiconductor systems are integrated. In this work, we optimize the morphologyof free-standing 2D InSb nanoflags (NFs). In particular, robust NW stems,optimized growth parameters, and the use of reflection high-energy electrondiffraction (RHEED), to precisely orient the substrate for preferential growth,are implemented to increase the lateral size of the 2D InSb NFs. Transmissionelectron microscopy (TEM) analysis of these NFs reveals defect-free zinc blendcrystal structure, stoichiometric composition, and relaxed lattice parameters.The resulting NFs are large enough to fabricate Hall-bar contacts with suitablelength-to-width ratio enabling precise electrical characterization. An electronmobility of ~29,500 cm2/Vs is measured, which is the highest value reported forfree-standing 2D InSb nanostrutures in literature. We envision the use of 2DInSb NFs for fabrication of advanced quantum devices.

High Mobility Free-Standing InSb Nanoflags Grown On InP Nanowire Stems For Quantum Devices