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Chromium atoms in graphene have been proposed to exhibit magnetic moments andspin-selective conducting states depending on the local bonding geometry withinthe graphene structure, which could lead to interesting applications inspintronics. Despite this interest, there are few direct experimental reportsof Cr dopants in graphene even though it is theorized to be stable. Here, wedemonstrate the introduction of single Cr dopant atoms into the graphenelattice and onto graphene edges through the controlled use of a focusedelectron beam in a scanning transmission electron microscope. We show localcontrol of doping locations and when coupled with targeted in situ millingduring scanning of the e-beam, these strategies demonstrate an importantcomponent of the fabrication of tailored nanostructured devices in the electronmicroscope. The approach is validated with first principles calculations tounderstand synthesis pathways during fabrication and reveal the energetics andlocal properties of Cr atoms embedded in graphene; e.g., Cr doping can convertgraphene into a magnetic and semiconducting material, which suggests Cr-dopedgraphene can be used as a building block for potential electronic devices and ameans to construct them.

Doping of Cr in Graphene Using Electron Beam Manipulation for Functional Defect Engineering