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Bi-stable arched beams exhibiting Euler-Bernoulli snap-through buckling arevastly used as electronic devices in various applications, such as memorydevices, energy harvesters, sensors, and actuators. Recently, we reported therealization of the smallest bi-stable resonator to date, in the form of abuckled suspended carbon nanotube (CNT), which exhibits a uniquethree-dimensional snap-through transition and an extremely large change infrequency as a result. In this article, we address a unique characteristic ofthese devices, in which a significant change in the DC conductance is alsoobserved at the mechanical snap-through transition. After verifying that thechange in the CNT tension due to the "jump" cannot account for the conductancedifference measured, we attribute the conductance "jump" to the change incapacitance as a result of the snap-through buckling. However, we show thatquantitative analysis of this phenomenon is not at all trivial, and is enabledonly due to our ability to predict the exact CNT shape before and after thetransition. Understanding this mechanism enables a fast characterization offabricated devices and improves our understanding of their behavior, key indeveloping this technology further and better design. As an example, we showhow the hysteretic trait of this phenomenon is indicative of the ability toachieve static latching, useful for RF switches, bi-stable relays, and memorydevices.

DC Signature of snap-through bi-stability in carbon nanotube resonators