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We describe how the out-of-plane dielectric polarizability of monolayergraphene influences the electrostatics of bilayer graphene -- both Bernal (BLG)and twisted (tBLG). We compare the polarizability value computed using densityfunctional theory with the output from previously published experimental dataon the electrostatically controlled interlayer asymmetry potential in BLG anddata on the on-layer density distribution in tBLG. We show that monolayers intBLG are described well by polarizability $\alpha_{exp} = 10.8\unicode{x212B}^3$ and effective out-of-plane dielectric susceptibility$\epsilon_z = 2.5$, including their on-layer electron density distribution atzero magnetic field and the inter-layer Landau level pinning at quantizingmagnetic fields.

Out-of-plane dielectric susceptibility of graphene in twistronic and Bernal bilayers