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Layered van~der~Waals materials of the family TaTMTe$_4$ (TM=Ir, Rh, Ru) areshowing very interesting electronic properties. Here we report the synthesis,crystal growth and structural characterization of TaIrTe$_4$, TaRhTe$_4$,TaIr$_{1-x}$Rh$_{x}$Te$_4$ ($x = 0.06$; 0.14; 0.78; 0.92) andTa$_{1+x}$Ru$_{1-x}$Te$_4$ single crystals. For Ta$_{1+x}$Ru$_{1-x}$Te$_4$off-stoichiometry is shown. X-ray powder diffraction confirms that TaRhTe4 isisostructural to TaIrTe4. We show that all these compounds are metallic withdiamagnetic behavior. Ta$_{1.26(2)}$Ru$_{0.75(2)}$Te$_{4.000(8)}$ exhibits anupturn in the resistivity at low temperatures which is strongly fielddependent. Below $T \approx 4$K we observed signatures of the superconductivityin the TaIr$_{1-x}$Rh$_{x}$Te$_4$ compounds for $x = 0.92$. Magnetotransportmeasurements on all samples show weak magnetoresistance (MR) field dependencethat is typically quadratic-in-field. However, for TaIr$_{1-x}$Rh$_{x}$Te$_4$with $x\approx 0.78$, the MR has a linear term dominating in low fields thatindicates the presence of Dirac cones in the vicinity of the Fermi energy. ForTaRhTe$_4$ series the MR is almost isotropic. We have performed electronicstructure calculations for isostructural TaIrTe$_4$ and TaRhTe$_4$ togetherwith the projected total density of states. The main difference is appearanceof the Rh-band close to the Fermi level.

Layered van der Waals topological metals of TaTMTe4 (TM = Ir, Rh, Ru) family