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The precise positioning of dopant atoms within bulk crystal lattices couldenable novel applications in areas including solid-state sensing and quantumcomputation. Established scanning probe techniques are capable tools for themanipulation of surface atoms, but at a disadvantage due to their need to bringa physical tip into contact with the sample. This has prompted interest inelectron-beam techniques, followed by the first proof-of-principle experimentof bismuth dopant manipulation in crystalline silicon. Here, we use firstprinciples modeling to discover a novel indirect exchange mechanism that allowselectron impacts to non-destructively move dopants with atomic precision withinthe silicon lattice. However, this mechanism only works for the two heaviestgroup V donors with split-vacancy configurations, Bi and Sb. We verify ourmodel by directly imaging these configurations for Bi, and by demonstratingthat the promising nuclear spin qubit Sb can be manipulated using a focusedelectron beam.

Mechanism of electron-beam manipulation of single dopant atoms in silicon