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Understanding the luminescence of GaN doped with erbium (Er) requires a detailed knowledge of the interaction between the rare‐earth dopant and the nitride host, including intrinsic defects and other impurities that may be present in the host material. We address this problem through a first‐principles hybrid density functional study of the structure, energetics, and transition levels of the Er impurity and its complexes with N and Ga vacancies, substitutional C and O impurities, and H interstitials in wurtzite GaN. We find that, in the interior of the material, Er Ga  is the dominant Er 3+  center with a formation energy of 1.55 eV, Er Ga –V N  possesses a deep donor level at 0.61 eV which can assist in the transfer of energy to the 4 f  ‐electron core. Multiple optically active Er 3+  centers are possible in Er‐doped GaN. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

Hybrid density functional study of optically active Er 3+ centers in GaN