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AbstractWe compare the electronic characteristics of nanowire field‐effect transistors made using single pure wurtzite and pure zincblende InAs nanowires grown from identical catalyst particles. We compare the transfer characteristics and field‐effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors