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The semiconducting half‐Heusler compound YPtSb has been predicted to convert into a topological insulator under the application of an appropriate degree of strain. In this study, p‐type semiconducting YPtSb thin films were prepared by magnetron co‐sputtering, using a specially designed target. YPtSb thin films grown on MgO (100) substrates at 600 °C showed a textured structure with the (111) plane parallel to the (001) plane of MgO. Electrical measurements showed that the resistivity of the YPtSb films decreases with increasing temperature, indicating semiconductor‐like behavior. The carrier density was as high as 1.15 × 10 21  cm –3  at 300 K. The band gap of the YPtSb thin films was around 0.1–0.15 eV, which was in good agreement with the theoretical prediction and the value measured for bulk YPtSb. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Fabrication and characterization of semiconducting half‐Heusler YPtSb thin films