Electron–phonon interaction and phonon conductivity of the n‐type semiconductors Mg 2 Ge and Mg 2 Sn at low temperatures

It is shown that the expressions obtained by Singh for the relaxation rates of the resonance scattering of phonons by donor electrons for n‐type zemiconductors in presence of internal static and dynamic strains in the crystal can account very well for phonon‐conductivity results for the n‐type semiconductors Mg 2 Ge and Mg 2 Sn at low temperatures.