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Electron–phonon interaction and phonon conductivity of the n‐type semiconductors Mg 2 Ge and Mg 2 Sn at low temperatures
Author(s) -
Singh Mahiradhwaj
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220900143
Subject(s) - phonon , condensed matter physics , semiconductor , relaxation (psychology) , electron , scattering , conductivity , phonon scattering , materials science , crystal (programming language) , resonance (particle physics) , chemistry , physics , atomic physics , optics , optoelectronics , psychology , social psychology , quantum mechanics , computer science , programming language
Abstract It is shown that the expressions obtained by Singh for the relaxation rates of the resonance scattering of phonons by donor electrons for n‐type zemiconductors in presence of internal static and dynamic strains in the crystal can account very well for phonon‐conductivity results for the n‐type semiconductors Mg 2 Ge and Mg 2 Sn at low temperatures.