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The back‐cover illustration shows the three‐dimensional structure of a hydrogenated void surface in amorphous silicon obtained from ab initio molecular‐dynamics simulations at 400 K with a hydrogen load of 30 H atoms/void. H 2  molecules inside the cavity can be seen to appear as red dumbbells, whereas the presence of silicon‐hydrogen bonding configurations on the surface of the void is shown in yellow‐red colors. For further details see article number  2000494  by Parthapratim Biswas and Dil Limbu.

Ab Initio Hydrogen Dynamics and the Morphology of Voids in Amorphous Silicon