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Van der Waals heterostructures of (TMD L = 1 /BN L = 1–4 /TMD L = 1/ BN L = 1–4 ), [TMD = MoS 2 , WS 2 , and ReS 2 ] are grown on  c ‐plane sapphire substrate by pulsed laser deposition (PLD) under slow kinetic condition. The heterostructure systems show strong emission around 2.3 eV and subsidiary peaks around 2.8, 1.9, 1.7, and 1.5 eV. BN and transition metal dichalcogenides (TMDs) form type‐I heterojunction and the emission peaks observed are explained in terms of various band to band recombination processes and considering relative orientation of Brillouin zones. The emission peak around 2.3 eV is promising for solar and photovoltaic applications. The observation is almost similar for three different heterostructure systems.

Distinct Photoluminescence in Multilayered van der Waals Heterostructures of MoS 2 /WS 2 /ReS 2 and BN