English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

We report here the gate‐tunable dielectric properties (see abstract figure) induced by the substrate driven interactions (SDI) and the exchange field ( M ) due to the ferro‐magnetic impurities in graphene monolayer on transition metal dichalcogenide heterostructure. The interactions involve sub‐ lattice‐resolved, enhanced intrinsic spin‐orbit couplings (SOC), the extrinsic Rashba spin‐orbit coupling (RSOC), and the orbital gap related to the transfer of the electronic charge from graphene to the substrate. We obtain the gapped bands with a RSOC‐dependent pseudo Zeeman field due to the interplay of SDI. This enables us to obtain an expression of the dielectric function in the finite doping case ignoring the spin‐flip scattering events completely. We find that the stronger RSOC has foiling effect on the Thomas‐Fermi screening length.This foiling effect, over a broad range of the exchange field values (0–1 meV), is an indication of the domination of the Dyakonov–Perel mechanism in the system over the Elliot–Yafet spin relaxation mechanism.The zero of the dielectric function corresponds to the plasmon dispersion which yields the  q  2/3  behavior, and not the well known  q  1/2  behavior, in the long wavelength limit. We find that, in this limit, the acoustic plasmons emerge when the carrier density ≥1.0 × 10 17  m −2 .  Contour plot showing the plasmon frequency in arbitrary unit as a function of the gate voltage ( V  g ) and the absolute value of dimensionless wave vector in the case of graphene on WSe 2  at  T  ≈ 0 K. The exchange field  M  = 0. Plot and color‐bar indicate the increase in plasmon frequency with increase in the absolute value of  V  g  at a given wave vector.

Dielectric properties of graphene on transition metal dichalcogenide substrate