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Defects usually play an important role in tuning and modifying various properties of semiconducting or insulating materials. Therefore, we study the impact of point and line defects on the electronic structure and optical properties of    MoS  2    monolayers using density‐functional methods. The different types of defects form electronic states that are spatially localized on the defect. The strongly localized nature is reflected in weak electronic interactions between individual point or line defects, a weak dependence of the defect formation energy on the defect concentration or line defect separation, and sharply peaked defect states in the energy spectrum. The electronic structure of the monolayer system is quite robust and it is well preserved for point defect concentrations of up to 6%. The impact of point defects on the optical absorption for concentrations of 1% and below is found to be very small. For higher defect concentrations, molybdenum vacancies were found to quench the overall absorption and sulfur defects lead to sharp absorption peaks below the absorption edge of the ideal monolayer. For line defects, we did not find a considerable impact on the absorption spectrum. These results support recent experiments on defective transition metal chalcogenides.

Localized defect states in MoS 2 monolayers: Electronic and optical properties