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Abstractauthoren We show experimentally that the uniaxial stress applied along the twofold symmetry axis of a high‐quality heterostructure containing a wide GaAs/AlGaAs quantum well leads to considerable modification of the exciton‐polariton reflectivity spectra. We observe: (i) the energy splitting of the light‐hole and heavy‐hole exciton resonances to appear and (ii) the increase of the quasiperiod (divergence) of spectral oscillations related to the optically allowed exciton‐polariton transitions. A theoretical analysis shows that the first effect is due to the strain‐induced reduction of crystal symmetry. The divergence of spectral oscillations is found to be due to the strain‐induced decrease of the heavy‐hole exciton mass. The effective mass is reduced by 5% at the pressure of   P  =  0.23  GPa. This effect shows the potentiality of spectroscopic ways of strain detection in semiconductors.

Reduction of exciton mass by uniaxial stress in GaAs/AlGaAs quantum wells