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We present the metamorphosis in the effective‐potential profile of layered heterostructures, for several III–V semiconductor binary compounds, when the band mixing of light and heavy holes increases. A root‐locus‐like procedure is directly applied to an eigenvalue quadratic problem obtained from a multichannel system of coupled modes, in the context of the multiband effective mass approximation. By letting grow valence‐band mixing, it is shown that the standard fixed‐height rectangular potential energy for the scatterer distribution is a reliable test‐run input for heavy holes. On the contrary, this scheme is no longer valid for light holes and a mutable effective  band offset  profile has to be considered instead whenever the in‐plane kinetic energy changes.

Valence‐band effective‐potential evolution for coupled holes