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A surface distribution of the electroluminescence intensity of silicon p–n light‐emitting diodes is obtained under space‐scanning experiments at room temperature. An emitting surface of the diodes, represented by a few small bright emitting dots and a weakly emitting area outside the dots, serves as direct evidence of the self‐compression of injected electron–hole plasma in silicon. The plasma self‐compression explains concentration of injected carriers into one or a few strongly emitting plasma drops. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Direct evidence of the self‐compression of injected electron–hole plasma in silicon