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Optical Absorption at the Surface of a Semiconductor
Author(s) -
Bartoš I.
Publication year - 1969
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19690330231
Subject(s) - semiconductor , absorption (acoustics) , attenuation coefficient , materials science , surface (topology) , band gap , crystal (programming language) , optics , optoelectronics , atomic physics , physics , mathematics , composite material , geometry , computer science , programming language
Abstract The existence of bands of surface states in the energy gap of an infinite crystal gives rise to additional absorption of light. The characteristic features of behaviour of the absorption coefficient are discussed.

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