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Photoluminescence spectra are investigated in erbium‐doped GaLaS(O) glasses. Under optical pumping by a semiconductor laser diode operating at 808 nm, the samples demonstrate intense “green” emission bands centered at around 525 and 550 nm as well as much weaker “red” emission band centered at around 664 nm. The intensities of “green” and “red” emission bands are investigated as a function of pumping intensity. The cascade mechanism of generation of radiation from higher lying levels of the 4f‐shellEr   3  +ions is discussed to interpret these experimental results and the theoretical description of the phenomenon is developed.

Intense Anti‐Stokes Emission from Erbium Ions in Gallium Lanthanum Sulphide–Oxide Glass in the Visible Spectral Range