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To realize the full spectrum of advantages that the III‐nitride materials system offers, the demonstration of p‐channel III‐nitride‐based devices is valuable. The first p‐type field‐effect transistor (pFET) based on an AlGaN/GaN superlattice (SL), grown using metal–organic chemical vapor deposition (MOCVD), is reported. Magnesium is used as the p‐type dopant. A sheet resistance of 11.6 kΩ □ −1  and a contact resistance of 14.9 Ω mm are determined using transmission line measurements (TLMs) for Mg doping of 1.5 × 10 19  cm −3 . Mobilities in the range of 7–10 cm 2  (V s) −1  and a total sheet charge density in the range of 1 × 10 13 –6 × 10 13  cm −2  are measured using room temperature Hall effect measurements. Without tetramethylammonium hydroxide (TMAH) treatment, the fabricated pFETs have a maximum drain‐source current ( I  DS ) of 3 mA mm −1  and an on‐resistance ( R  ON ) of 3.48 kΩ mm and do not turn off completely. With TMAH treatment during fabrication, a maximum  I  DS  of 4.5 mA mm −1 ,  R  ON  of 2.2 kΩ mm, and five orders of current modulation are demonstrated.

AlGaN/GaN Superlattice‐Based p‐Type Field‐Effect Transistor with Tetramethylammonium Hydroxide Treatment